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2SK1070 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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2SK1070 Datasheet(HTML) 1 Page - Renesas Technology Corp |
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1 / 5 page  Rev.2.00, Mar.14.2005, page 1 of 4 2SK1070 Silicon N-Channel Junction FET REJ03G0574-0200 (Previous ADE-208-1175 (Z)) Rev.2.00 Mar.14.2005 Application • Low frequency / High frequency amplifier Outline 1 2 3 1. Drain 2. Source 3. Gate RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Gate to drain voltage VGDO –22 V Gate to source voltage VGSO –22 V Drain current ID 50 mA Gate current IG 10 mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C |
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