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2SJ549 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part No. 2SJ549
Description  Silicon P Channel MOS FET
Download  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ549 Datasheet(HTML) 4 Page - Renesas Technology Corp

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2SJ549(L), 2SJ549(S)
Rev.4.00 Jun 05, 2006 page 4 of 8
0.5
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.1
0.2
0.3
0.4
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Pulse Test
ID = –5 A
ID = –12 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
20
10
2
5
0.5
1
0.2
–0.1
–0.2
–0.5
–1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.2
–0.5
–1
–2
–5
–10
500
200
50
100
20
5
10
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
2000
500
1000
200
20
50
100
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Dynamic Input Characteristics
816
24
32
40
VDS
VGS
1000
100
300
30
3
10
1
–0.2
–0.5
–1
–5
–2
–10
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
–10 V
VGS = –4 V
–2 A
–5 A
–1 A
–1 A, –2 A
VGS = –10 V, VDD = –30 V
PW = 5
µs, duty ≤ 1 %


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