2SC1472K datasheet(4/6 Pages) RENESAS

Part #	2SC1472K

Description	Silicon NPN Epitaxial, Darlington

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 6 page

2SC1472(K)

Rev.2.00 Aug 10, 2005 page 4 of 5

Base Current IB (mA)

2.4

2.0

1.6

1.2

0.8

0.4

0

1100

30

300

3

10

1,000

Collector to Emitter Saturation

Voltage vs. Base Current

Pulse

Ta = 25

°C

IC = 500 mA

20 50 100 200

75

Collector Current IC (mA)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1100

20

200

210

550

500

Base to Emitter Saturation

Voltage vs. Collector Current

Pulse

IC = 1,000 IB

Ta = –50°

C

–25

25

50

100

0

Collector to Base Voltage VCB (V)

Emitter to Base Voltage VEB (V)

10

8

6

4

2

0

0.1

30

3

1.0

10

0.3

Input and Output Capacitance vs. Voltage

f = 1 MHz

Cob(IE = 0)

Cib(IC = 0)

Base Current IC (mA)

30

10

3

1.0

0.3

0.1

0.03

0.3

30

10

100

1.0

3

300

Switching Time vs. Collector Current

toff

tstg

ton

td

IC = 100 IB1 = –100 IB2

VCC = 10.5 V

Switching Time Test Circuit

50

0.002

–6 V

10.5 V

D.U.T.

CRT

P.G.

tr, tf

≤ 15 ns

PW ³ 10

µs

duty ratio

≤ 10%

+

–

50

0.002

+

–

Unit R :

Ω

C :

µF

13 V

0

10%

Response Waveform

90%

ton

toff

td

tstg

Input

Output

90%

10%

90%

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