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STPS5H100B-TR Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS5H100B-TR Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 5 page STPS5H100 3/5 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6: Relative variation of thermal impedance junction to case versus pulse duration Figure 7: Reverse leakage current versus reverse voltage applied Figure 8: Junction capacitance versus reverse voltage applied (typical values) Figure 9: Forward voltage drop versus forward current (maximum values) Figure 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) 1E-3 1E-2 1E-1 1E+0 0 10 20 30 40 50 60 70 80 90 100 110 120 t(s) IM(A) Tc=75°C Tc=50°C Tc=125°C IM t δ=0.5 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) Single pulse δ = 0.5 δ = 0.2 δ = 0.1 T δ=tp/T tp 0 1020 3040 50 6070 8090 100 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 5E+3 VR(V) IR(µA) Tj=125°C Tj=25°C 1 10 100 10 100 1000 VR(V) C(pF) F=1MHz Tj=25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1.0 10.0 50.0 VFM(V) IFM(A) Tj=25°C Tj=125°C 0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60 70 80 90 100 S(Cu) (cm²) Rth(j-a) (°C/W) |
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