2SA1193KTZ-E datasheet(3/6 Pages) RENESAS

Part #	2SA1193KTZ-E

Description	Silicon PNP Epitaxial, Darlington

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 6 page

2SA1193(K)

Rev.2.00 Aug 10, 2005 page 3 of 5

Main Characteristics

Maximum Collector Dissipation Curve

0.9

0.6

0.3

050

150

100

Ambient Temperature Ta (°C)

Area of Safe Operation

–3

–1.0

–0.3

–0.1

–0.03

–0.01

–0.003

–3

–30

–300

–10

–100

Collector to Emiter Voltage VCE (V)

iC (peak)

IC max

Ta = 25

°C

Typical Output Characteristics

–500

–400

–300

–200

–100

0

–2

–6

–10

–4

–8

Collector to Emitter Voltage VCE (V)

IB = 0

–5

µA

–10

–20

P

C =

0.9W

–40

–60

–80

–100

DC Current Transfer Ratio vs.

Collector Current

100,000

30,000

10,000

3,000

1,000

300

100

–10

–30

–100

–1,000

–300

Collector Current IC (mA)

VCE = –3 V

Pulse

Ta = 75

°C

25

°C

Saturation Voltage vs.

Collector Current

–10

–3

IC = 500 IB

Pulse

Ta = 25

°C

75

°C

–1.0

–0.3

–0.1

–10

–30

–300

–100

–1,000

Collector Current IC (mA)

VBE(sat)

VCE(sat)

Switching Time vs. Collector Current

10

3

1.0

toff

tstg

ton

td

0.3

0.1

0.03

0.01

–10

–30

Collector Curret IC (mA)

–100

–1,000

–300

IC = 500 IB

Ta = 25

°C

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