2

RF Device Data

Freescale Semiconductor

MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +5

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

-65 to +150

°C

Case Operating Temperature

150

°C

225

°C

Input Power

20

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

2 W Avg.

20 W Avg.

4.3

1.5

4.3

1.25

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1B (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Stage 1 — Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

Stage 1 — On Characteristics

Gate Threshold Voltage

1.2

2

2.7

Vdc

Gate Quiescent Voltage

—

2.8

—

Vdc

Fixture Gate Quiescent Voltage

9.5

12.2

16.5

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

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