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MRF5P21240HR6 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc |
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MRF5P21240HR6 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc |
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5 / 12 page  MRF5P21240HR6 5 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 2200 5 15 2080 −50 40 IRL Gps ACPR IM3 f, FREQUENCY (MHz) Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 52 Watts Avg. VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −5 −10 −15 −20 −25 2100 2120 2140 2160 2180 14 35 13 30 12 25 11 20 10 −25 9 −30 8 −35 7 −40 6 −45 300 12 14 2 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two-Tone Power Gain versus Output Power 13.5 13 12.5 100 10 IDQ = 2640 mA 2420 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing 2200 mA 1980 mA 1760 mA 300 −55 −25 2 IDQ = 2640 mA 2420 mA Pout, OUTPUT POWER (WATTS) PEP Figure 5. Third Order Intermodulation Distortion versus Output Power VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −30 −35 −40 −45 −50 10 100 2200 mA 1980 mA 1760 mA 30 −55 −25 0.1 7th Order TWO−TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Tone Spacing 5th Order 3rd Order −30 −35 −40 −45 −50 110 46 50 60 36 Ideal P3dB = 55.03 dBm (318.24 W) Actual Pin, INPUT POWER (dBm) Figure 7. Pulse CW Output Power versus Input Power VDD = 28 Vdc, IDQ = 2200 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 59 58 57 56 55 54 53 52 51 37 38 39 40 41 42 43 44 45 P1dB = 54.36 dBm (272.9 W) ηD VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz |
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