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HD1750JL Datasheet(PDF) 3 Page - STMicroelectronics

Part # HD1750JL
Description  Very high voltage NPN power transistor for high definition and slim CRT display
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

HD1750JL Datasheet(HTML) 3 Page - STMicroelectronics

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HD1750JL
Electrical characteristics
3/10
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE = 0)
VCE = 1700V
VCE = 1700V; TC = 125°C
0.2
2
mA
mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5V
10
µA
VCEO(sus)
(1)
1.
Pulsed: pulse duration = 300
µs, duty cycle < 2%
Collector-emitter
sustaining voltage (IB = 0)
IC = 10mA
800
V
VEBO
(1)
Emitter-base saturation
voltage (IC = 0)
IE = 10mA
10
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 12A; IB = 3A
3V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 12A; IB = 3A
0.95
1.5
V
hFE
DC current gain
IC = 1A;
VCE = 5V
IC = 12A;
VCE = 5V
5.5
30
8.5
ts
tf
Inductive load
Storage time
Fall time
IC = 12A;
IB(on)= 1.8A
IB(off)= -7.25A;
VCE(fly)= 1320V;
VBE(off)= -2.7V;
LBB(on)= 0.8µH;
fh= 31520Hz
3
300
3.6
450
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 6.5A;
IB(on)= 1.1A
IB(off)= -5.25A;
VCE(fly)= 1220V;
VBE(off)= -2.7V;
LBB(on)= 0.25µH;
fh= 100kHz
1.6
110
2
220
µs
ns


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