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HD1750JL Datasheet(PDF) 3 Page - STMicroelectronics |
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HD1750JL Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page HD1750JL Electrical characteristics 3/10 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 1700V VCE = 1700V; TC = 125°C 0.2 2 mA mA IEBO Emitter cut-off current (IC = 0) VEB = 5V 10 µA VCEO(sus) (1) 1. Pulsed: pulse duration = 300 µs, duty cycle < 2% Collector-emitter sustaining voltage (IB = 0) IC = 10mA 800 V VEBO (1) Emitter-base saturation voltage (IC = 0) IE = 10mA 10 V VCE(sat) (1) Collector-emitter saturation voltage IC = 12A; IB = 3A 3V VBE(sat) (1) Base-emitter saturation voltage IC = 12A; IB = 3A 0.95 1.5 V hFE DC current gain IC = 1A; VCE = 5V IC = 12A; VCE = 5V 5.5 30 8.5 ts tf Inductive load Storage time Fall time IC = 12A; IB(on)= 1.8A IB(off)= -7.25A; VCE(fly)= 1320V; VBE(off)= -2.7V; LBB(on)= 0.8µH; fh= 31520Hz 3 300 3.6 450 µs ns ts tf Inductive load Storage time Fall time IC = 6.5A; IB(on)= 1.1A IB(off)= -5.25A; VCE(fly)= 1220V; VBE(off)= -2.7V; LBB(on)= 0.25µH; fh= 100kHz 1.6 110 2 220 µs ns |
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