MC9S08QA4 Series, Rev. 2

Electrical Characteristics

Freescale Semiconductor

6

Eqn. 1

where:

—

is:

Eqn. 2

Solving Equation 1 and Equation 2 for K gives:

2

Eqn. 3

3.4

ESD Protection and Latch-Up Immunity

Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,

normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure

that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.

All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During

the device qualification ESD stresses were performed for the human body model (HBM), the machine model (MM) and the

charge device model (CDM).

Table 3. Thermal Characteristics

Rating

Symbol

Value

Unit

Operating temperature range

(packaged)

–40 to 85

°C

Thermal resistance

Single-layer board

8-pin PDIP

θ

JA

113

°C/W

8-pin NB SOIC

150

8-pin DFN

179

Thermal resistance

Four-layer board

8-pin PDIP

θ

JA

72

°C/W

8-pin NB SOIC

87

8-pin DFN

41