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L6926Q1TR Datasheet(PDF) 9 Page - STMicroelectronics |
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L6926Q1TR Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 16 page L6926 Operation description 9/16 4.2 Short circuit protection During the device operation, the inductor current increases during the high side turn ON phase and decrease during the high side turn off phase based on the following equations: Equation 1 Equation 2 In strong overcurrent or shortcircuit conditions the VOUT can be very close to zero. In this case ΔI ON increases and ΔIOFF decreases. When the inductor peak current reaches the current limit, the high side mosfet turns off and so the TON is reduced down to the minimum value (250 ns typ.) in order to reduce as much as possible ΔI ON. Anyway, if VOUT is low enough it can be that the inductor peak current further increases because during the TOFF the current decays very slowly. Due to this reason a second protection that fixes the maximum inductor valley current has been introduced. This protection doesn't allow the high side MOSFET to turn on if the current flowing through the inductor is higher that a specified threshold (valley current limit). Basically the TOFF is increased as much as required to bring the inductor current down to this threshold. So, the maximum peak current in worst case conditions will be: Equation 3 Where IPEAK is the valley current limit (1.4 A typ.) and TON_MIN is the minimum TON of the high side MOSFET. ΔI ON V IN V OUT – () L ---------------------------------- T ON ⋅ = ΔI OFF V OUT () L ------------------- T OFF ⋅ = I PEAK I VALLEY V IN L --------- T ON_MIN ⋅ + = |
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