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MCZ33290EFR2 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc |
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MCZ33290EFR2 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 12 page Analog Integrated Circuit Device Data Freescale Semiconductor 7 33290 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB ≤ 18 V, -40°C ≤ TC ≤ 125°C, unless otherwise noted. Characteristic Symbol Min Typ Max Unit Fall Time (19) RISO = 510 Ω to VBB, CISO = 10 nF to Ground tfall(ISO) – – 2.0 µs ISO Propagation Delay (20) High to Low: RISO = 510 Ω, CISO = 500 pF (21) Low to High: RISO = 510 Ω, CISO = 500 pF (22) tPD(ISO) – – – – 2.0 2.0 µs Notes 19. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB. 20. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay. 21. Step TX voltage from 0.2 VDD to 0.8 VDD. Time measured from VIH(ISO) until VISO reaches 0.3 VBB. 22. Step TX voltage from 0.8 VDD to 0.2 VDD. Time measured from VIL(ISO) until VISO reaches 0.7 VBB. |
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