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FDP15N65_0704 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDP15N65_0704 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  2 www.fairchildsemi.com FDP15N65 / FDPF15N65 Rev. B Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 15A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP15N65 FDP15N65 TO-220 -- -- 50 FDPF15N65 FDPF15N65 TO-220F -- -- 50 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 650 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.65 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V VDS = 520V, TC = 125°C -- -- -- -- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 7.5A -- 0.36 0.44 Ω gFS Forward Transconductance VDS = 40V, ID = 7.5A (Note 4) -- 19.2 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2380 3095 pF Coss Output Capacitance -- 295 385 pF Crss Reverse Transfer Capacitance -- 23.6 35.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 325V, ID = 15A RG = 21.7Ω (Note 4, 5) -- 65 140 ns tr Turn-On Rise Time -- 125 260 ns td(off) Turn-Off Delay Time -- 105 220 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 520V, ID = 15A VGS = 10V (Note 4, 5) -- 48.5 63.0 nC Qgs Gate-Source Charge -- 14.0 -- nC Qgd Gate-Drain Charge -- 21.2 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 15 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 15A dIF/dt =100A/μs (Note 4) -- 496 -- ns Qrr Reverse Recovery Charge -- 5.69 -- μC |
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