©2008 Fairchild Semiconductor Corporation

FDD8878 / FDU8878 Rev. A4

0

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1

FDD8878 / FDU8878

30V, 40A, 15m

Ω

Features

High performance trench technology for extremely low

Low gate charge

High power and current handling capability

RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either

synchronous

or

conventional

switching

PWM

controllers. It has been optimized for low gate charge, low

D

G

S

G DS

I-PAK

(TO-251AA)

G

S

D

D-PAK

(TO-252)

Application

DC / DC Converters

tm

April

2008