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STPS15L25D Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS15L25D Datasheet(HTML) 2 Page - STMicroelectronics |
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STPS15L25D/G 2/5 Symbol Parameter Value Unit Rth(j-c) Junction to case 1 °C/W THERMAL RESISTANCES Symbol Parameters Test conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 1.3 mA Tj = 125°C 225 450 mA VF * Forward voltage drop Tj = 25°C IF = 15A 0.46 V Tj = 125°C IF = 15A 0.3 0.35 Tj = 25°C IF = 30A 0.56 Tj = 125°C IF = 30A 0.41 0.46 Pulse test : * tp = 380 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=0.24xIF(AV) + 0.0073 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 8 IF(av) (A) PF(av)(W) δ = 0.2 δ = 0.5 δ = 1 δ = 0.05 δ = 0.1 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 IF(av)(A) Rth(j-a)=50°C/W Rth(j-a)=Rth(j-c) Tamb(°C) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ = 0.5). 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM Fig. 4: Normalized avalanche power derating versus junction temperature. 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 3: Normalized avalanche power derating versus pulse duration. |
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