STPS15H100CB datasheet(3/4 Pages) STMICROELECTRONICS

Part #	STPS15H100CB

Description	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STPS15H100CB

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0

10

20

30

40

50

60

70

80

90

100

1.E-03

1.E-02

1.E-01

1.E+00

t(s)

Tc=25°C

Tc=75°C

Tc=125°C

IM(A)

IM

t

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0

10

2030

405060

7080

90

100

VR(V)

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

IR(mA)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VFM(V)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

IFM(A)

Fig. 9: Forward voltage drop versus forward current.

0

10

20

30

40

50

60

70

80

90

100

02468

10

12

14

16

18

20

S(cm²)

Rth(j-a)(°C/W)

Fig. 10: Thermal resistance junction to ambient ver-

sus copper surface under tab (epoxy printed board

FR4, Cu = 35µm).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Zth(j-c)/Rth(j-c)

T

δ=tp/T

tp

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

0.0

0.1

1.0

1

10

100

VR(V)

F=1MHz

Vosc=30mV

Tj=25°C

C(nF)

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values).

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