2SA1962OTU datasheet(2/6 Pages) FAIRCHILD

Part #	2SA1962OTU

Description	PNP Epitaxial Silicon Transistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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2SA1962/FJA4213 Rev. A2

2

Electrical Characteristics* T

a=25°C unless otherwise noted

* Pulse Test: Pulse Width=20

µs, Duty Cycle≤2%

Ordering Information

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCBO

Collector-Base Breakdown Voltage

IC=-5mA, IE=0

-230

V

BVCEO

Collector-Emitter Breakdown Voltage

IC=-10mA, RBE=∞

-230

V

BVEBO

Emitter-Base Breakdown Voltage

IE=-5mA, IC=0

-5

V

ICBO

Collector Cut-off Current

VCB=-230V, IE=0

-5.0

µA

IEBO

Emitter Cut-off Current

VEB=-5V, IC=0

-5.0

µA

hFE1

DC Current Gain

VCE=-5V, IC=-1A

55

160

hFE2

DC Current Gain

VCE=-5V, IC=-7A

35

60

VCE(sat)

Collector-Emitter Saturation Voltage

IC=-8A, IB=-0.8A

-0.4

-3.0

V

VBE(on)

Base-Emitter On Voltage

VCE=-5V, IC=-7A

-1.0

-1.5

V

fT

Current Gain Bandwidth Product

VCE=-5V, IC=-1A

30

MHz

Cob

Output Capacitance

VCB=-10V, f=1MHz

360

pF

Part Number

Marking

Package

Packing Method

Remarks

2SA1962RTU

A1962R

TO-3P

TUBE

hFE1 R grade

2SA1962OTU

A1962O

TO-3P

TUBE

hFE1 O grade

FJA4213RTU

J4213R

TO-3P

TUBE

hFE1 R grade

FJA4213OTU

J4213O

TO-3P

TUBE

hFE1 O grade

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