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FDP13N50F Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FDP13N50F
Description  N-Channel MOSFET 500V, 12A, 0.54廓
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDP13N50F Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FDP13N50F / FDPF13N50FT Rev.
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
110
1
10
20
30
*Notes:
1. 250µs Pulse Test
2. TC = 25
oC
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
VDS,Drain-Source Voltage[V]
345678
1
10
150
oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
25
oC
VGS,Gate-Source Voltage[V]
50
0
1020
3040
0.3
0.4
0.5
0.6
0.7
0.8
0.9
*Note: TJ = 25
oC
VGS = 20V
VGS = 10V
ID, Drain Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
1
10
100
*Notes:
1. V
GS = 0V
2. 250µs Pulse Test
150
oC
V
SD, Body Diode Forward Voltage [V]
25
oC
0.1
1
10
0
1500
3000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
VDS, Drain-Source Voltage [V]
30
0
5
10
15
20
25
30
0
2
4
6
8
10
*Note: ID = 13A
VDS = 100V
VDS = 250V
VDS = 400V
Qg, Total Gate Charge [nC]


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