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FDFMA2P029Z Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FDFMA2P029Z Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page FDFMA2P029Z Rev.B1 www.fairchildsemi.com 5 Figure 7. 0246 8 10 12 14 0 2 4 6 8 10 IDD = -3.1A VDD = -15V VDD = -5V Qg, GATE CHARGE(nC) VDD = -10V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1000 50 f = 1MHz VGS = 0V -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 20 Capacitance Characteristics Figure 9. Forward Bias Safe Operating Area 0.1 1 10 0.01 0.1 1 10 20 VGS=-4.5V SINGLE PULSE R TJA = 173 oC/W TA = 25 oC 60 1s DC 10s 100ms 10ms 1ms 100us r DS(on) LIMIT -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 10. 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0 10 20 30 40 50 SINGLE PULSE RTJA = 173 oC/W T A=25 oC SINGLE PULSE t, PULSE WIDTH (s) Single Pulse Maximum Power Dissipation Figure 11. 0 200 400 600 800 0.001 0.01 0.1 1 10 TJ = 85oC TJ = 25oC TJ = 125 oC VF, FORWARD VOLTAGE(mV) Schottky Diode Forward Voltage Figure 12. 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 TJ = 85oC TJ = 25oC TJ = 125 oC VR, REVERSE VOLTAGE (V) Schottky Diode Reverse Current Typical Characteristics T J = 25°C unless otherwise noted |
Similar Part No. - FDFMA2P029Z_08 |
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Similar Description - FDFMA2P029Z_08 |
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