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6

FDMC8678S Rev.C

SyncFET Schottky body diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel

with

PowerTrench

MoSFET.

This

diode

exhibits

similar

characteristics to a discrete external Schottky diode in parallel

with a MOSFET. Figure 14 shows the reverses recovery

characteristic of the FDMC8678S.

Schottky barrier diodes exhibit significant leakage at high tem-

perature and high reverse voltage. This will increase the power

in the device.

Figure 13. SyncFET body diode reverse

recovery characteristic

Figure 14. SyncFET body diode reverses

leakage versus drain-source voltage

TIME : 12.5ns/div

0

5

10

15

20

25

30

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

V