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FDB3502 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDB3502 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2008 Fairchild Semiconductor Corporation FDB3502 Rev.C2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 75 V ∆BV DSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 70 mV/°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2.5 3.8 4.5 V ∆V GS(th) ∆T J Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C -10 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6A 37 47 m Ω VGS = 10V, ID = 6A, TJ = 125°C 63 80 gFS Forward Transconductance VDD = 10V, ID = 6A 13 S Dynamic Characteristics Ciss Input Capacitance VDS = 40V, VGS = 0V, f = 1MHz 615 815 pF Coss Output Capacitance 75 105 pF Crss Reverse Transfer Capacitance 35 40 pF Rg Gate Resistance f = 1MHz 1.5 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 40V, ID = 6A, VGS = 10V, RGEN = 6Ω 9 17 ns tr Rise Time 3 10 ns td(off) Turn-Off Delay Time 13 22 ns tf Fall Time 3 10 ns Qg Total Gate Charge at 10V VDD = 40V ID = 6A 11 15 nC Qgs Gate to Source Charge 4 nC Qgd Gate to Drain “Miller” Charge 3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.6A (Note 2) 0.78 1.2 V VGS = 0V, IS = 6A (Note 2) 0.83 1.3 trr Reverse Recovery Time IF = 6A, di/dt = 100A/µs 25 41 ns Qrr Reverse Recovery Charge 17 32 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a . 40°C/W when mounted on a 1 in2 pad of 2 oz copper b . 62.5°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 75V, VGS = 10V. |
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