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STB80NF03L-04 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB80NF03L-04 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 11 page 1/11 February 2003 . STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.0035Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) TYPE VDSS RDS(on) ID STB80NF03L-04/-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A 1 2 3 1 3 1 2 3 TO-220 D2PAK TO-263 I2PAK TO-262 INTERNAL SCHEMATIC DIAGRAM Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (**) Current Limited by Package (1) ISD ≤80A, di/dt ≤240A/µs, VDD ≤ 24V, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 40A, VDD = 20V SALES TYPE MARKING PACKAGE PACKAGING STB80NF03L-04 80NF03L-04 @ D2PAK TUBE STB80NF03L-04T4 80NF03L-04 @ D2PAK TAPE & REEL STP80NF03L-04 80NF03L-04 @ TO-220 TUBE STB80NF03L-04-1 80NF03L-04 @ I2PAK TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 20 V ID(**) Drain Current (continuous) at TC = 25°C 80 A ID(**) Drain Current (continuous) at TC = 100°C 80 A IDM(•) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 2 V/ns EAS (2) Single Pulse Avalanche Energy 2.3 J Tstg Storage Temperature -60 to 175 °C Tj Max. Operating Junction Temperature 175 °C |
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