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2N7002W Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # 2N7002W
Description  N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N7002W Datasheet(HTML) 1 Page - Fairchild Semiconductor

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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
2N7002W Rev. A
1
October 2007
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free/RoHS Compliant
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,
Symbol
Parameter
Value
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage RGS ≤ 1.0MΩ
60
V
VGSS
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
ID
Drain Current
Continuous
Continuous @ 100°C
Pulsed
115
73
800
mA
TJ , TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Derating above TA = 25°C
200
1.6
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient *
625
°C/W
S
D
G
SOT - 323
Marking : 2N


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