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FGPF45N45T Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part # FGPF45N45T
Description  450V, 45A PDP Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGPF45N45T Datasheet(HTML) 4 Page - Fairchild Semiconductor

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FGPF45N45T Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
0
4
8
12
16
20
0
4
8
12
16
20
IC = 20A
45A
30A
Common Emitter
TC = 125
o
C
Gate-Emitter Voltage, VGE [V]
110
10
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
030
60
90
120
0
3
6
9
12
15
200V
Common Emitter
TC = 25
o
C
V
CC = 100V
Gate Charge, Qg [nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
I
C MAX (Continuous)
I
C MAX (Pulse)
1ms
10 ms
DC Operation
Single Nonrepetitive
Pulse TC = 25
oC
Curves must be derated
linearly with increase
in temperature
10µs
100µs
Collector-Emitter Voltage, VCE [V]
500
0
10
20304050
10
100
1000
t
f
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
TC = 25
o
C
TC = 125
o
C
t
d(off)
Gate Resistance, RG [Ω]
0
10
20304050
1
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG [Ω]
500
Gate Resistance
Gate Resistance


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