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IRFZ46ZSPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFZ46ZSPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 13 page 07/15/04 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. IRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF HEXFET® Power MOSFET S D G VDSS = 55V RDS(on) = 13.6mΩ ID = 51A Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free AUTOMOTIVE MOSFET PD - 95562 Description Specifically designed for Automotive applica- tions, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an ex- tremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRFZ46ZS TO-220AB IRFZ46Z TO-262 IRFZ46ZL Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.84 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 10 lbf•in (1.1N•m) 82 0.54 ± 20 63 97 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 Max. 51 36 200 |
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