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STB75NF75L Datasheet(PDF) 3 Page - STMicroelectronics |
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STB75NF75L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STB75NF75L/-1 STP75NF75L SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 40 V ID = 37.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 3) 35 150 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 60V ID = 75 A VGS= 5V 75 18 31 90 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 40 V ID = 37.5 A RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 3) 110 60 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 75 300 A A VSD (*) Forward On Voltage ISD = 75 A VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 75 A di/dt = 100A/µs VDD = 20 V Tj = 150°C (see test circuit, Figure 5) 100 380 7.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area Thermal Impedance |
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