STP70NF03L datasheet(2/9 Pages) STMICROELECTRONICS

Part #	STP70NF03L

Description	N-CHANNEL 30V - 0.008ohm - 70A TO-220/I2PAK LOW GATE CHARGE STripFET??POWER MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP70NF03L/STB70NF03L-1

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

1.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

35

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

450

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 15V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

12

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 35 A

0.008

0.01

Ω

VGS = 5 V, ID = 18 A

0.015

0.018

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS =10V

70

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID = 35 A

40

S

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1470

pF

Coss

Output Capacitance

490

pF

Crss

Reverse Transfer

Capacitance

110

pF

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