TC3977 datasheet(1/1 Pages) TRANSCOM

Part #	TC3977

Description	3 W Packaged Single-Bias PHEMT GaAs Power FETs

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Manufacturer	TRANSCOM [Transcom, Inc.]

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TC3977

PRE2_20050418

TRANSCOM, INC., 90 Dasoong 7

th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 1

3 W Packaged Single-Bias PHEMT GaAs Power FETs

FEATURES

• 3W Typical Output Power

• 12dB Typical Linear Power Gain at 2.45GHz

• High Linearity: IP3 = 45 dBm Typical

• High Power Added Efficiency: Nominal PAE of 35%

• Breakdown Voltage: BV

DGO

≥ 18V

• Wg = 7.5 mm

• 100 % DC Tested

• Suitable for High Reliability Application

DESCRIPTION

The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is

designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal

conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of

commercial application. All devices are 100% DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

P1dB

Output Power at 1dB Gain Compression Point VDS = 10 V

34.5

35.5

dBm

GL

Linear Power Gain VDS = 10 V

12

dB

IP3

Intercept Point of the 3

rd-order Intermodulation V

DS = 10 V, *PSCL = 24 dBm

45

dBm

PAE

Power Added Efficiency at 1dB Compression Power

35

%

IDS

Drain-Source Current at VDS = 10 V

900

mA

BVDGO

Drain-Gate Breakdown Voltage at IDGO = 3.75mA

18

22

Volts

Rth

Thermal Resistance

5.3

°C/W

Note: *PSCL: Output Power of Single Carrier Level.

PHOTO ENLARGEMENT

Preliminary

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