STP5NK60ZFP datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STP5NK60ZFP

Description	N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP5NK60Z - STP5NK60ZFP- STD5NK60Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Table 7: Dynamic

Table 8: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 50µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 2.5 A

1.2

1.6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 8 V, ID = 2.5 A

4

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

690

90

20

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 480V

40

pF

td(on)

tr

td(off)

tr

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 300 V, ID = 2.5 A

RG = 4.7

Ω VGS = 10 V

(see Figure 20)

16

25

36

25

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 480V, ID = 5 A,

RG = 4.7

Ω, VGS = 10V

(see Figure 20)

12

10

24

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400V, ID = 5 A,

VGS = 10V

(see Figure 23)

26

6

20

34

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

5

20

A

VSD (1)

Forward On Voltage

ISD = 5 A, VGS = 0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 5 A, di/dt = 100A/µs

VDD = 30V, Tj = 150°C

(see Figure 21)

485

2.7

11

ns

µC

A

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