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STB5NC70Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STB5NC70Z Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STP5NC70Z - STP5NC70ZFP - STB5NC70Z - STB5NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE GATE-SOURCE ZENER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT(25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =350 V, ID = 2.5 A RG = 4.7Ω VGS =10V (see test circuit, Figure 3) 22 10 ns ns Qg Total Gate Charge VDD =560V, ID = 5A, VGS =10V 27 36.4 nC Qgs Gate-Source Charge 8 nC Qgd Gate-Drain Charge 10 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 560V, ID =5 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 ns tf Fall Time 14 ns tc Cross-over Time 22 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4.6 A ISDM (2) Source-drain Current (pulsed) 18.4 A VSD (1) Forward On Voltage ISD = 4.6 A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 5 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 570 ns Qrr Reverse Recovery Charge 4.4 µC IRRM Reverse Recovery Current 15.5 A Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 25 V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID =50mA, VGS =0 90 Ω |
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