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STP5NB40FP Datasheet(PDF) 3 Page - STMicroelectronics |
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STP5NB40FP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 7 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it td(on) tr Turn-on Time Rise Time VDD =200 V ID =2.3 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 11 8 17 12 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =320 V ID =4.7 A VGS = 10 V 14. 5 7 5.1 22 nC nC nC SWITCHING OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =320 V ID =4.7 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 9 6 14 13 10 20 ns ns ns SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 4.7 19 A A VSD ( ∗) Forward On Voltage ISD =4.7 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =4.7 A di/dt = 100 A/ µs VDD =100 V Tj =150 oC (see test circuit, figure 5) 300 1.6 10. 5 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STP5NB40/FP 3/7 |
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