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STP4NK60Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP4NK60Z Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page  3/16 STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 50µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 2 A 1.76 2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15V, ID =2 A 3 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V,f= 1MHz,VGS = 0 510 67 13 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 480V 38.5 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =300 V, ID =2 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 12 9.5 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =480V, ID =4 A, VGS =10V 18.8 3.8 9.8 26 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID =2 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 29 16.5 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID =4A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 12 12 19.5 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 4 16 A A VSD (1) Forward On Voltage ISD = 4 A, VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, di/dt = 100A/µs VDD =24V, Tj = 150°C (see test circuit, Figure 5) 400 1700 8.5 ns nC A |
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