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STP4NK60Z Datasheet(PDF) 2 Page - STMicroelectronics |
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STP4NK60Z Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 16 page  STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1 2/16 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area (1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA AVALANCHE CHARACTERISTICS GATE-SOURCE ZENER DIODE PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Symbol Parameter Value Unit STP4NK60Z STB4NK60Z STB4NK60Z-1 STP4NK60ZFP STD4NK60Z STD4NK60Z-1 VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain-gate Voltage (RGS =20kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4 4 (*) 4 A ID Drain Current (continuous) at TC = 100°C 2.5 2.5 (*) 2.5 A IDM ( ) Drain Current (pulsed) 16 16 (*) 16 A PTOT Total Dissipation at TC = 25°C 70 25 70 W Derating Factor 0.56 0.2 0.56 W/°C VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K Ω) 3000 V dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 - V Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 -55 to 150 °C °C TO-220 D2PAK I2PAK TO-220FP DPAK IPAK Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =50 V) 120 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 V |
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