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ISPLSI1016E80LT44 Datasheet(PDF) 4 Page - Lattice Semiconductor |
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ISPLSI1016E80LT44 Datasheet(HTML) 4 Page - Lattice Semiconductor |
4 / 13 page 4 Specifications ispLSI 1016E Switching Test Conditions Figure 2. Test Load DC Electrical Characteristics Over Recommended Operating Conditions Input Pulse Levels Table 2-0003/1016E Input Rise and Fall Time 10% to 90% Input Timing Reference Levels Output Timing Reference Levels Output Load GND to 3.0V 1.5V 1.5V See Figure 2 3-state levels are measured 0.5V from steady-state active level. -125 -100, -80 ≤ 2 ns ≤ 3 ns Output Load Conditions (see Figure 2) TEST CONDITION R1 R2 CL A 470Ω 390Ω 35pF B ∞ 390Ω 35pF 470Ω 390Ω 35pF Active High Active Low C 470Ω 390Ω 5pF ∞ 390Ω 5pF Active Low to Z at V +0.5V OL Active High to Z at V -0.5V OH Table 2-0004/1016E + 5V R1 R2 CL* Device Output Test Point *CL includes Test Fixture and Probe Capacitance. 0213a VOL SYMBOL 1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems by tester ground degradation. Characterized but not 100% tested. 2. Measured using four 16-bit counters. 3. Typical values are at V = 5V and T = 25°C. 4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum I . Table 2-0007/1016E 1 VOH IIH IIL IIL-isp PARAMETER IIL-PU IOS 2, 4 ICC Output Low Voltage Output High Voltage Input or I/O High Leakage Current Input or I/O Low Leakage Current ispEN Input Low Leakage Current I/O Active Pull-Up Current Output Short Circuit Current Operating Power Supply Current I = 8 mA I = -4 mA 3.5V ≤ V ≤ V 0V ≤ V ≤ V (Max.) 0V ≤ V ≤ V 0V ≤ V ≤ V V = 5V, V = 0.5V V = 0.5V, V = 3.0V f = 1 MHz OL OH IN IL IN CC IN IL IN IL CC OUT CLOCK IL IH CONDITION MIN. TYP. MAX. UNITS 3 – 2.4 – – – – – – – – – – – – – – 90 90 0.4 – 10 -10 -150 -150 -200 – – V V μA μA μA μA mA mA mA CC A OUT CC CC Commercial Industrial |
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