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STP36NF03L Datasheet(PDF) 1 Page - STMicroelectronics

Part No. STP36NF03L
Description  N-CHANNEL 30V - 0.015 ohm - 36A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP36NF03L Datasheet(HTML) 1 Page - STMicroelectronics

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STP36NF03L
N-CHANNEL 30V - 0.015
Ω - 36A TO-220
LOW GATE CHARGE STripFET
™ POWER MOSFET
PRELIMINARY DATA
s
TYPICAL RDS(on) = 0.015
s
TYPICAL Qg = 18 nC @ 10V
s
OPTIMAL RDS(on) xQg TRADE-OFF
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
™” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
®
INTERNAL SCHEMATIC DIAGRAM
January 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
30
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)30
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC36
A
ID
Drain Current (continuous) at Tc =100
oC25
A
IDM (
•)
Drain Current (pulsed)
144
A
Ptot
T otal Dissipat ion at Tc =25
oC75
W
Derating Factor
0.5
W /
o C
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
T YPE
VDSS
RDS(on)
ID
STP36NF03L
30 V
< 0. 02
36 A
1
2
3
TO-220
1/6


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