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STG3P2M10N60B Datasheet(PDF) 1 Page - STMicroelectronics |
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STG3P2M10N60B Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. May 2006 Rev1 1/12 12 ■ N-channel very fast PowerMESH™ IGBT ■ Lower on-voltage drop (Vcesat) ■ Lower CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode ■ High frequency operation up to 70 KHz ■ New generation products with tighter parameter distribution ■ Compact design ■ Semitop®2 is a trademark of semikron Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances. Applications ■ High frequency motor controls ■ Motor drivers Internal schematic diagram General features Type VCES VCE(sat)(Max) @ IC=7A, Ts=25°C IC@80°C STG3P2M10N60B 600V < 2.5V 10A SEMITOP®2 STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module www.st.com Order codes Sales type Marking Package Packaging STG3P2M10N60B G3P2M10N60B SEMITOP®2 SEMIBOX |
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