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STP20NM50FD Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STP20NM50FD
Description  N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh™ Power MOSFET with FAST DIODE
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP20NM50FD Datasheet(HTML) 2 Page - STMicroelectronics

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STP20NM50FD/STB20NM50FD-1
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
A
ID
Drain Current (continuous) at TC = 100°C
14
A
IDM ( )
Drain Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
192
W
Derating Factor
1.2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
Rthj-case
Thermal Resistance Junction-case
Max
0.65
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID =IAR,VDD =35 V)
700
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS =0
500
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS = ±30V
±100
nA
VGS(th
Gate Threshold Voltage
VDS =VGS,ID = 250 µA
34
5V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10A
0.22
0.25


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