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L6743BTR Datasheet(PDF) 9 Page - STMicroelectronics

Part # L6743BTR
Description  High current MOSFET driver
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6743BTR Datasheet(HTML) 9 Page - STMicroelectronics

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L6743B
Device description and operation
9/16
5.3
Internal BOOT diode
L6743B embeds a boot diode to supply the high-side driver saving the use of an external
component. Simply connecting an external capacitor between BOOT and PHASE complete
the high-side supply connections.
To prevent bootstrap capacitor to extra-charge as a consequence of large negative spikes,
an external series resistance RBOOT (in the range of few ohms) may be required in series to
BOOT pin.
Bootstrap capacitor needs to be designed in order to show a negligible discharge due to the
high-side MOSFET turn-on. In fact it must give a stable voltage supply to the high-side driver
during the MOSFET turn-on also minimizing the power dissipated by the embedded Boot
Diode. Figure 5 gives some guidelines on how to select the capacitance value for the
bootstrap according to the desired discharge and depending on the selected MOSFET.
Figure 5.
Bootstrap capacitance design
5.4
Power dissipation
L6743B embeds high current drivers for both high-side and low-side MOSFETs: it is then
important to consider the power that the device is going to dissipate in driving them in order
to avoid overcoming the maximum junction operative temperature.
Two main terms contribute in the device power dissipation: bias power and drivers' power.
Device power (PDC) depends on the static consumption of the device through the
supply pins and it is simply quantifiable as follow:
Drivers' power is the power needed by the driver to continuously switch ON and OFF
the external MOSFETs; it is a function of the switching frequency and total gate charge
of the selected MOSFETs. It can be quantified considering that the total power PSW
dissipated to switch the MOSFETs dissipated by three main factors: external gate
resistance (when present), intrinsic MOSFET resistance and intrinsic driver resistance.
This last term is the important one to be determined to calculate the device power
dissipation.
The total power dissipated to switch the MOSFETs results:
P
DC
V
CC
I
CC
V
PVCC
I
PVCC
+
=
P
SW
F
SW
Q
GHS
PVCC
Q
GLS
VCC
+
()
=


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