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STP200NF03 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP200NF03 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 14 page 1/14 AUTOMOTIVE SPECIFIC October 2002 STP200NF03 STB200NF03 STB200NF03-1 N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.0032Ω s STANDARD THRESHOLD DRIVE s 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS TYPE VDSS RDS(on) ID STB200NF03/-1 STP200NF03 30 V 30 V <0.0036 Ω <0.0036 Ω 120 A(**) 120 A(**) 1 2 3 1 3 1 2 3 TO-220 D²PAK TO-263 I²PAK TO-262 INTERNAL SCHEMATIC DIAGRAM Ordering Information ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (**) Current Limited by Package (1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V SALES TYPE MARKING PACKAGE PACKAGING STB200NF03T4 B200NF03 D2PAK TAPE & REEL STP200NF03 P200NF03 TO-220 TUBE STB200NF03-1 B200NF03 I2PAK TUBE Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 20 V ID(**) Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 120 A IDM(•) Drain Current (pulsed) 480 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns EAS (2) Single Pulse Avalanche Energy 1.45 J Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
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