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THBT27011D Datasheet(PDF) 2 Page - STMicroelectronics |
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THBT27011D Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 10 page Characteristics THBT15011, THBT20011, THBT27011 2/10 1 Characteristics Figure 2. Pulse waveform 10/1000 µs, tr = 10 µs, tp = 1000 µs Figure 3. Test circuit for IPP Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current(1) 1. For pulse waveform see Figure 2 10 / 1000 µs 30 A ITSM Non repetitive surge peak on-state current (F = 50 Hz) tp = 10 ms t = 1 s 8 3.5 A Tstg Tj Storage temperature range Maximum junction temperature - 40 to + 150 150 °C TL Maximum lead temperature for soldering during 10s 260 °C 100 50 %I PP t t r p 0 t Longitudinal mode THBT See test circuit 3 RP TIP RING GND IPP/2 RP IPP/2 Transversal mode TIP or RING GND THBT RP IPP See test circuit 3 |
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