Technical information

USBUF01P6

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This confirms the very low remaining voltage across the device to be protected. It is also

important to note that in this approximation the parasitic inductance effect was not taken into

The measurements done hereafter show very clearly (Figure 7.a) the high efficiency of the

ESD protection:

–

no influence of the parasitic inductances on Voutput stage

Figure 7.

surge.

Please note that the USBUF01P6 is not only acting for positive ESD surges but also for

negative ones. For these kinds of disturbances it clamps close to ground voltage as shown

in Figure 7.b.

a: Positive surge

b: Negative surge