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PC48F4400PMR00 Datasheet(PDF) 1 Page - Numonyx B.V

Part # PC48F4400PMR00
Description  Numonyx Wireless Flash Memory (W18)
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

PC48F4400PMR00 Datasheet(HTML) 1 Page - Numonyx B.V

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Order Number: 290701-18
November 2007
Numonyx™ Wireless Flash Memory (W18)
Datasheet
Product Features
High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz
(zero wait states)
—60 ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst
mode reads
— Burst and Page mode reads in all Blocks,
across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/
word
Security
—128-Bit OTP Protection Register:
64 unique pre-programmed bits +
64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/
Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range: –40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend
latency time
— Flash Data Integrator (FDI) and Common
Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC = 1.70 V to 1.95 V
—VCCQ (90 nm) = 1.7 V to 1.95 V
—VCCQ (130 nm) = 1.7 V to 2.24 V or 1.35 V
to 1.80 V
—VCCQ (130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)


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