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STL35NF10 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STL35NF10
Description  N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT??LOW GATE CHARGE STripFET??MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL35NF10 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
August 2001
STL35NF10
N-CHANNEL 100V - 0.025
Ω - 35A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
s
TYPICAL RDS(on) = 0.025Ω
s
IMPROVED DIE-TO-FOOTPRINT RATIO
s
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allows a significant reduction in
board space without compromising performance.
APPLICATIONS
s
HIGH EFFICIENCY ISOLATED DC/DC
CONVETERS
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STL35NF10
100 V
< 0.030
Ω
35 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
35
22
A
A
IDM (q)
Drain Current (pulsed)
140
A
PTOT
Total Dissipation at TC = 25°C
80
W
Derating Factor
0.64
W/°C
EAS (1)
Single Pulse Avalanche Energy
135
mJ
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
–55 to 150
°C
(1) Starting Tj = 25°C, ID = 35A, VDD = 50V
PowerFLAT™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM


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