Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HC6856NSHCC35 Datasheet(PDF) 3 Page - Honeywell Solid State Electronics Center

Part # HC6856NSHCC35
Description  32K x 8 STATIC RAM
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center

HC6856NSHCC35 Datasheet(HTML) 3 Page - Honeywell Solid State Electronics Center

  HC6856NSHCC35 Datasheet HTML 1Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 2Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 3Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 4Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 5Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 6Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 7Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 8Page - Honeywell Solid State Electronics Center HC6856NSHCC35 Datasheet HTML 9Page - Honeywell Solid State Electronics Center Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
HC6856
3
Pulse width
≤1 µs
Total Dose
≥1x106
rad(SiO
2)
Transient Dose Rate Upset (3)
≥1x109
rad(Si)/s
Transient Dose Rate Survivability
≥1x1012
rad(Si)/s
Soft Error Rate:
Level A
<1x10-9 (4)
Level Z
<1x10-10
Neutron Fluence
≥1x1014
N/cm2
TA=25
°C
Parameter
Limits (2)
Pulse width
≤50 ns, X-ray,
VDD=6.6 V, TA=25
°C
(1) Device will not latch up due to any of the specified radiation exposure conditions.
(2) Operating conditions (unless otherwise specified): VDD=4.5 V to 5.5 V, TA=-55
°C to 125°C.
(3) Suggested stiffening capacitance specifications for optimum expected dose rate upset performance is stated above in the text.
(4) SER <1x10-10 u/b-d from -55 to 80
°C.
Adams 10%
worst case environment
Test Conditions
RADIATION HARDNESS RATINGS (1)
Total Ionizing Radiation Dose
The RAM will meet all stated functional and electrical speci-
fications over the entire operating temperature range after
the specified total ionizing radiation dose. All electrical and
timing performance parameters will remain within specifica-
tions after rebound at VDD = 5.5 V and T =125
°C extrapo-
lated to ten years of operation. Total dose hardness is
assured by wafer level testing of process monitor transistors
and RAM product using 10 keV X-ray radiation. Transistor
gate threshold shift correlations have been made between
10 keV X-rays applied at a dose rate of 1x105 rad(SiO
2)/min
at T = 25
°C and gamma rays (Cobalt 60 source) to ensure
that wafer level X-ray testing is consistent with standard
military radiation test environments.
Transient Pulse Ionizing Radiation
The RAM is capable of writing, reading, and retaining
stored data during and after exposure to a transient ionizing
radiation pulse of
≤1 µs duration up to 1x109 rad(Si)/s, when
applied under recommended operating conditions. To en-
sure validity of all specified performance parameters be-
fore, during, and after radiation (timing degradation during
transient pulse radiation is
≤10%), it is suggested that a
minimum of 0.8
µF per part of stiffening capacitance be
placed between the package (chip) VDD and VSS, with a
maximum inductance between the package (chip) and
stiffening capacitance of 0.7 nH per part. If there are no
operate-through or valid stored data requirements, the
capacitance specification can be reduced to a minimum of
0.1
µF per part.
The RAM will meet any functional or electrical specification
after exposure to a radiation pulse of
≤ 50 ns duration up to
1x1012 rad(Si)/s, when applied under recommended oper-
ating conditions. Note that the current conducted during the
pulse by the RAM inputs, outputs, and power supply may
significantly exceed the normal operating levels. The appli-
cation design must accommodate these effects.
Neutron Radiation
The RAM will meet any functional or timing specification
after a total neutron fluence of up to 1x1014 cm-2 applied
under recommended operating or storage conditions. This
assumes an equivalent neutron energy of 1 MeV.
Soft Error Rate
The RAM is capable of soft error rate (SER) performance
of <1x10-10 upsets/bit-day, under recommended operating
conditions. This hardness level is defined by the Adams
10% worst case cosmic ray environment.
Latchup
The RAM will not latch up due to any of the above radiation
exposure conditions when applied under recommended
operating conditions. Fabrication with the RICMOSp-epi
on p+ substrate process and use of proven design tech-
niques, such as double guardbanding, ensure latchup
immunity.
1 MeV equivalent energy,
Unbiased, TA=25
°C
Units
upsets/bit-day
RADIATION CHARACTERISTICS


Similar Part No. - HC6856NSHCC35

ManufacturerPart #DatasheetDescription
logo
Intersil Corporation
HC68T1M2 INTERSIL-HC68T1M2 Datasheet
474Kb / 24P
   CMOS Serial Real-Time Clock With RAM and Power Sense/Control
HC68T1M2Z INTERSIL-HC68T1M2Z Datasheet
474Kb / 24P
   CMOS Serial Real-Time Clock With RAM and Power Sense/Control
logo
NXP Semiconductors
HC68VBIGRS/D NXP-HC68VBIGRS/D Datasheet
1Mb / 120P
   General Release Specification
Rev. 3.1 08/2005
More results

Similar Description - HC6856NSHCC35

ManufacturerPart #DatasheetDescription
logo
Honeywell Solid State E...
HX6256 HONEYWELL-HX6256 Datasheet
780Kb / 13P
   32K x 8 Static RAM
logo
Cypress Semiconductor
CY62256V CYPRESS-CY62256V Datasheet
316Kb / 13P
   32K x 8 Static RAM
CY7C199 CYPRESS-CY7C199 Datasheet
317Kb / 13P
   32K x 8 Static RAM
CY7C199N CYPRESS-CY7C199N Datasheet
488Kb / 10P
   32K x 8 Static RAM
CY7C199 CYPRESS-CY7C199_06 Datasheet
315Kb / 11P
   32K x 8 Static RAM
logo
Weida Semiconductor, In...
WCMS0808U1X WEIDA-WCMS0808U1X Datasheet
224Kb / 10P
   32K x 8 Static RAM
logo
Cypress Semiconductor
CY7C199B CYPRESS-CY7C199B Datasheet
257Kb / 15P
   32K x 8 Static RAM
CY7C199C CYPRESS-CY7C199C Datasheet
117Kb / 12P
   32K x 8 Static RAM
logo
Weida Semiconductor, In...
WCFS0808C1E WEIDA-WCFS0808C1E Datasheet
193Kb / 10P
   32K x 8 Static RAM
logo
Cypress Semiconductor
CY7C198 CYPRESS-CY7C198 Datasheet
467Kb / 9P
   32K x 8 Static RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com