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HC6856NVHAC35 Datasheet(PDF) 4 Page - Honeywell Solid State Electronics Center

Part # HC6856NVHAC35
Description  32K x 8 STATIC RAM
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Manufacturer  HONEYWELL [Honeywell Solid State Electronics Center]
Direct Link  http://honeywell.com/Pages/Home.aspx
Logo HONEYWELL - Honeywell Solid State Electronics Center

HC6856NVHAC35 Datasheet(HTML) 4 Page - Honeywell Solid State Electronics Center

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HC6856
4
VDD
Positive Supply Voltage (2)
-0.5
7.0
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°C
TSOLDER
Soldering Temperature • Time
270•5
°C•s
PD
Total Package Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage (4)
2000
V
ΘJC
Thermal Resistance (Jct-to-Case)
28 FP/36 FP
2
°C/W
28 DIP
10
°C/W
TJ
Junction Temperature
175
°C
Parameter
Symbol
Rating
Units
Min
Max
ABSOLUTE MAXIMUM RATINGS (1)
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
Symbol
Test Conditions
Min
Max
Worst Case
Parameter (2)
Typical
(1)
Units
NCS=VDD=VDR
VI=VDR or VSS
VDR
Data Retention Voltage (3)
2.0
2.5
V
IDR
Data Retention Current
150
400
µA
NCS=VDR
VI=VDR or VSS
(1) Typical operating conditions: TA= 25
°C, pre-radiation.
(2) Worst case operating conditions: TA= -55
°C to +125°C, post total dose at 25°C.
(3) To maintain valid data storage during transient radiation, VDD must be held within the recommended operating range.
DATA RETENTION CHARACTERISTICS
CI
Input Capacitance
4
6
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
6.5
8
pF
VIO=VDD or VSS, f=1 MHz
Parameter
Max
Symbol
Typical
Test Conditions
Worst Case
Units
(1) This parameter is tested during initial design characterization only.
CAPACITANCE (1)
Symbol
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Typ
Units
Description
Parameter
RECOMMENDED OPERATING CONDITIONS
Min
Max


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