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L6392D013TR Datasheet(PDF) 1 Page - STMicroelectronics |
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L6392D013TR Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. March 2008 Rev 2 1/19 19 L6392 High-voltage high and low side driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: – 270 mA source – 430 mA sink ■ Switching times 75/35 nsec rise/fall with 1 nF load ■ 3.3 V, 5 V TTL/CMOS inputs with hysteresis ■ Integrated bootstrap diode ■ Operational amplifier for advanced current sensing ■ Adjustable dead-time ■ Interlocking function ■ Compact and simplified layout ■ Bill of material reduction ■ Flexible, easy and fast design Application Description The L6392 is a high-voltage device, manufactured with the BCD “OFF-LINE" technology. It has a monolitich half-bridge gate driver for N-channel Power MOSFET or IGBT. The high side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy of interfacing microcont roller/DSP The IC embeds an op amp suitable for advanced current sensing in applications such as field oriented motor control. DIP-14 SO-14 Table 1. Device summary Order codes Package Packaging L6392 DIP-14 Tube L6392D SO-14 Tube L6392D013TR SO-14 Tape and reel www.st.com |
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