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STGP7NB60KD Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STGP7NB60KD
Description  N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP7NB60KD Datasheet(HTML) 2 Page - STMicroelectronics

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STGP7NB60KD - STGP7NB60KDFP - STGB7NB60KD
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
STGP7NB60KD
STGB7NB60KD
STGP7NB60KDFP
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC =25°C
14
A
IC
Collector Current (continuous) at TC =100°C
7A
ICM ( )
Collector Current (pulsed)
56
A
PTOT
Total Dissipation at TC =25°C
80
25
W
Derating Factor
0.64
0.20
W/°C
VISO
Insulation Withstand Voltage A.C.(t= 1 sec; Tc= 25°C)
--
2500
V
Tstg
Storage Temperature
–55 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220
D2PAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.56
5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC= 250 µA, VGE= 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE= Max Rating, TC=25°C50
µA
VCE= Max Rating, TC=125°C
500
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE= ±20V, VCE= 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
57
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC =7 A
2.3
2.8
V
VGE= 15V, IC= 7 A, Tj= 125°C
1.9
V


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