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STD90NH02L Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STD90NH02L
Description  N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET™ III POWER MOSFET
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD90NH02L Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (5)
DYNAMIC
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.58
100
275
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 25 mA, VGS = 0
24
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 20 V
VDS = 20 V
TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
1
1.8
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
ID = 30 A
VGS = 5 V
ID = 15 A
0.0052
0.007
0.006
0.011
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (5)
Forward Transconductance
VDS = 10 V
ID = 30 A
40
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 15V f = 1 MHz VGS = 0
2850
800
120
pF
pF
pF
RG
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1


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