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SDR1183TX Datasheet(PDF) 1 Page - Solid States Devices, Inc |
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SDR1183TX Datasheet(HTML) 1 Page - Solid States Devices, Inc |
1 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: R00005B DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information 1/ SDR11 __ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level │ │ │ │ │ └ Pin Configuration __ = Normal (Cathode to Stud) (See Table 1) R = Reverse (Anode to Stud) │ │ │ │ │ │ │ │ └ Family/Voltage 83 = 50V 84 = 100V 85 = 150V 86 = 200V 87 = 300V 88 = 400V 89 = 500V 90 = 600V SDR1183 Thru SDR1190 35 Amp 50-600 Volt 5 μsec STANDARD RECOVERY RECTIFIER Features: • Low Reverse Leakage Current • Single Chip Construction • PIV to 600V • Hermetically Sealed • Low Thermal Resistance • Higher Voltage Devices Up to 1400V Available* • Fast and Ultra Fast Recovery Versions Available* • For Reverse Polarity Add Suffix “R” • Replacement for 1N1183, 1N1184, 1N1185, 1N1186, 1N1187, 1N1188, 1N1189, and 1N1190 • TX, TXV, and S-Level Screening Available 2/ *Contact Factory Maximum Ratings Symbol Value Units Peak Repetitive Reverse and DC Blocking Voltage SDR1183 SDR1184 SDR1185 SDR1186 SDR1187 SDR1188 SDR1189 SDR1190 VRRM VRWM VR 50 100 150 200 300 400 500 600 Volts Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Io 35 Amps Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) IFSM 500 Amps Operating & Storage Temperature TOP & TSTG -65 to +150 ºC Maximum Total Thermal Resistance Junction to Case RθJC 1.0 ºC/W Notes: 1/ For ordering information, price, operating curves, and availability- contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. DO-5: |
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