STD3NM50-1 datasheet(1/10 Pages) STMICROELECTRONICS

Part #	STD3NM50-1

Description	N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh?줡ower MOSFET

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April 2003

STD3NM50

STD3NM50-1

N-CHANNEL 500V - 2.5

Ω - 3A DPAK/IPAK

Zener-Protected MDmesh™Power MOSFET

s

TYPICAL RDS(on) = 2.5 Ω

s

HIGH dv/dt AND AVALANCHE CAPABILITIES

s

IMPROVED ESD CAPABILITY

s

LOW INPUT CAPACITANCE AND GATE

CHARGE

s

LOW GATE INPUT RESISTANCE

s

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH™ horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar completition’s products.

APPLICATIONS

The MDmesh™ family is very suitable for increase

the power density of high voltage converters allow-

ing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STD3NM50

STD3NM50-1

500V

<3

Ω

<3

Ω

3A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuous) at TC = 25°C

3A

ID

Drain Current (continuous) at TC = 100°C

1.89

A

IDM (q)

Drain Current (pulsed)

12

A

PTOT

Total Dissipation at TC = 25°C

46

W

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K

Ω)

4KV

Derating Factor

0.37

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1)ISD<3A, di/dt<400A/µs, VDD<V(BR)DSS,TJ<TJMAX

1

3

DPAK

TO-252

3

2

1

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

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