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STD3NM50-1 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD3NM50-1 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 10 page 1/10 April 2003 STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5 Ω - 3A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET s TYPICAL RDS(on) = 2.5 Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s IMPROVED ESD CAPABILITY s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STD3NM50 STD3NM50-1 500V 500V <3 Ω <3 Ω 3A 3A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain-gate Voltage (RGS =20kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 3A ID Drain Current (continuous) at TC = 100°C 1.89 A IDM (q) Drain Current (pulsed) 12 A PTOT Total Dissipation at TC = 25°C 46 W VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 4KV Derating Factor 0.37 W/°C dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD<3A, di/dt<400A/µs, VDD<V(BR)DSS,TJ<TJMAX 1 3 DPAK TO-252 3 2 1 IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM |
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