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STD35NF3LL-1 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD35NF3LL-1
Description  N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET??II POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD35NF3LL-1 Datasheet(HTML) 3 Page - STMicroelectronics

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STD35NF3LL/STD35NF3LL-1
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V
ID = 17.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
17
100
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 24 V ID = 35 A VGS= 5V
12.5
4.2
5.2
17
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 15 V
ID = 17.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
20
21
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
35
140
A
A
VSD (*)
Forward On Voltage
ISD = 35 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 35 A
di/dt = 100A/µs
VDD = 15 V
Tj = 150°C
(see test circuit, Figure 5)
35
44
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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